philips semiconductors product specification thyristors bt169 series logic level general description quick reference data glass passivated, sensitive gate symbol parameter max. max. max. max. unit thyristors in a plastic envelope, intended for use in general purpose bt169 b d e g switching and phase control v drm , repetitive peak 200 400 500 600 v applications. these devices are v rrm off-state voltages intended to be interfaced directly to i t(av) average on-state 0.5 0.5 0.5 0.5 a microcontrollers, logic integrated current circuits and other low power gate i t(rms) rms on-state current 0.8 0.8 0.8 0.8 a trigger circuits. i tsm non-repetitive peak 8888a on-state current pinning - to92 variant pin configuration symbol pin description 1 anode 2 gate 3 cathode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit bdeg v drm , v rrm repetitive peak off-state - 200 1 400 1 500 1 600 1 v voltages i t(av) average on-state current half sine wave; - 0.5 a t lead 83 ?c i t(rms) rms on-state current all conduction angles - 0.8 a i tsm non-repetitive peak t = 10 ms - 8 a on-state current t = 8.3 ms - 9 a half sine wave; t j = 25 ?c prior to surge i 2 ti 2 t for fusing t = 10 ms - 0.32 a 2 s di t /dt repetitive rate of rise of i tm = 2 a; i g = 10 ma; - 50 a/ m s on-state current after di g /dt = 100 ma/ m s triggering i gm peak gate current - 1 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 2 w p g(av) average gate power over any 20 ms period - 0.1 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature ak g 321 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. september 1997 1 rev 1.200
philips semiconductors product specification thyristors bt169 series logic level thermal resistances symbol parameter conditions min. typ. max. unit r th j-lead thermal resistance - - 60 k/w junction to lead r th j-a thermal resistance pcb mounted; lead length = 4mm - 150 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 10 ma; gate open circuit - 50 200 m a i l latching current v d = 12 v; i gt = 0.5 ma; r gk = 1 k w -26ma i h holding current v d = 12 v; i gt = 0.5 ma; r gk = 1 k w -25ma v t on-state voltage i t = 1 a - 1.2 1.35 v v gt gate trigger voltage v d = 12 v; i t = 10 ma; gate open circuit - 0.5 0.8 v v d = v drm(max) ; i t = 10 ma; t j = 125 ?c; 0.2 0.3 - v gate open circuit i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c; - 0.05 0.1 ma r gk = 1 k w dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; - 25 - v/ m s off-state voltage exponential waveform; r gk = 1 k w t gt gate controlled turn-on i tm = 2 a; v d = v drm(max) ; i g = 10 ma; - 2 - m s time di g /dt = 0.1 a/ m s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 100 - m s turn-off time i tm = 1.6 a; v r = 35 v; di tm /dt = 30 a/ m s; dv d /dt = 2 v/ m s; r gk = 1 k w september 1997 2 rev 1.200
philips semiconductors product specification thyristors bt169 series logic level fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus lead temperature, t lead . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t lead 83?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a = 1.57 1.9 2.2 2.8 4 bt169 if(av) / a ptot / w tc(max) / c 125 119 113 107 101 95 89 83 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 77 a 1 10 100 1000 0 2 4 6 8 10 bt169 number of half cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 1 10 100 1000 bt169 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t 0.01 0.1 1 10 0 0.5 1 1.5 2 bt169 surge duration / s it(rms) / a -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1 bt169 tlead / c it(rms) / a 83 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) september 1997 3 rev 1.200
philips semiconductors product specification thyristors bt169 series logic level fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j , r gk = 1 k w . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j , r gk = 1 k w . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-lead , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt169 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 typ bt169 vt / v it / a max tj = 125 c tj = 25 c vo = 1.067 v rs = 0.187 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt169 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 1 10 zth j-lead (k/w) 100 t p p t d bt169 -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt169 tj / c ih(tj) ih(25 c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) rgk = 1 kohms september 1997 4 rev 1.200
philips semiconductors product specification thyristors bt169 series logic level mechanical data dimensions in mm net mass: 0.2 g fig.13. to92; plastic envelope. notes 1. epoxy meets ul94 v0 at 1/8". 0.48 0.40 0.40 min 12.7 min 5.2 max 4.8 max 4.2 max 2.5 max 1.6 2.54 0.66 0.56 1 2 3 september 1997 5 rev 1.200
philips semiconductors product specification thyristors bt169 series logic level definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. september 1997 6 rev 1.200
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